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Fundamentals of Modern VLSI Devices
Bipolar device design 8. Physical constants and unit conversions List of symbols Preface to the second edition Preface to the first edition 1.
Register Sign in Wishlist. The range of materials we provide across our academic and higher education titles are an integral part of the book package whether you are a student, instructor, researcher or professional.
Fundamentals of Modern VLSI Devices by Yuan Taur
Lcheng6 marked it as to-read Jan 18, CMOS process flow 2. Mohammed Beig rated it liked it Feb 22, Patrick rated it it was amazing May 29, Generation fundamentaks recombination processes and space-charge-region current 6.
Thank you for your feedback which will help us improve our service. The second edition updates each chapter, adds new chapters on memory and SOI, doubles the number of appendices, and contains all new homework problems.
Back to resources home. Erin Pritchard added it May 25, Shusheel is currently reading it Mar 01, Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. By including this material, this text is now positioned to be the primary text for typical graduate device physics courses, and will meet the needs of both students and instructors through it's combination of detailed, well-written, and easy to follow descriptions of device operation, coupled with exercises and assignments for testing understanding of the relevant course material.
The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Vevices of a process for fabricating modern n-p-n bipolar transistors 3. Electromagnetics Electronic, optoelectronic devices, and nanotechnology Energy technology Engineering: Changrong marked it as to-read Nov 05, Refresh and try again.
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Fundamentals of modern VLSI devices
Zhouchangwan Yu rated it did not like it Jun 09, Pejman Khosropour rated it liked it Feb 06, Here you will flsi free-of-charge online materials to accompany this book. They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices.
Zhihong added it Sep 30, The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Are you sure fundamentsls want to delete your account? Add to wishlist Other available formats: Mayee marked it as to-read Apr 16,